中性点位三电平逆变模块Neutral Point Clamped Three-level InverterModule
650V 沟槽栅
场终止工艺 650V Trench Gate
低电磁干扰LowEMI低开关损耗 Low Switching LossesVcEsat
正温度系数 VcEsat with Positive Temperature Coefficient
低热阻三氧化二铝(Al2O3)衬底Al2O3 Substrate with Low Thermal Resistance
紧凑型设计 Compact Design
集成的安装夹使安装坚固 Rugged Mounting Due to Integrated MountingClamps
关注微信公众号
